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fCTSiliconix
.LJ!I incorporated
VN66 SERIES
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(il)
(A)
PACKAGE
VN66AD
60
3
1.7
TO-220
TO-220/TO-220SD
TOP VIEW
o
VN66AFD 60
3
1.46 TO-220SD
Performance Curves: VNDQ06 (See Section 7)
TO-220
1 GATE 2 & TAB - DRAIN 3 SOURCE
123
TO-220SD
1 SOURCE 2 GATE 3 & TAB - DRAIN
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) 2
PARAMETERS/TEST CONDITIONS
SYMBOL
VN66AD
VN66AFD
UNITS
Drain-Source Voltage Gate-Source Voltage
Vos
60
VGS
±30
60 V
±30
Tc= 25°C
1.7
Continuous Drain Current
ID
Tc = 100°C
1
1.46
0.92
A
Pulsed Drain Current 1
IDM
3
3
Power Dissipation
Tc= 25°C
20
Po
Tc = 100°C
8
15
W 6
Operating Junction and Storage Temperature
TJ.
VN66AD Datasheet
