VN66AFD Description
Tstg -55 to 150 Lead Temperature (1/16" from case for 10 seconds) h °C 300 SYMBOL Junction-to-Case RthJC ~pulse width limited by maximum junction temperature. ratings have been revised. ID =lA,VGEN =10V 8 RG= 25.n.
VN66AFD is N-Channel Enhancement-Mode MOS Transistors manufactured by Siliconix.
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
VN66AFD | N-Channel 60-V (D-S) MOSFETs |
GE |
VN66AFA | FIELD EFFECT POWER TRANSISTOR |
General Electric |
VN66AK | (VN66AK / VN67AK) Power Transistor |
Intersil |
VN66AK | (VN66AK / VN67AK) N-Channel Enhancement Mode Vertical Power MOSFET |
Tstg -55 to 150 Lead Temperature (1/16" from case for 10 seconds) h °C 300 SYMBOL Junction-to-Case RthJC ~pulse width limited by maximum junction temperature. ratings have been revised. ID =lA,VGEN =10V 8 RG= 25.n.