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VN66AFD - N-Channel Enhancement-Mode MOS Transistors

Download the VN66AFD datasheet PDF. This datasheet also covers the VN66AD variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN66AD-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN66AFD
Manufacturer Siliconix
File Size 95.48 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN66AFD Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN66AD N-Channel Enhancement-Mode MOS Transistors
VN67AB N-Channel Enhancement-Mode MOS Transistors
VN67AD N-Channel Enhancement-Mode MOS Transistors
VN67AFD N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
fCTSiliconix .LJ!I incorporated VN66 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN66AD 60 3 1.7 TO-220 TO-220/TO-220SD TOP VIEW o VN66AFD 60 3 1.46 TO-220SD Performance Curves: VNDQ06 (See Section 7) TO-220 1 GATE 2 & TAB - DRAIN 3 SOURCE 123 TO-220SD 1 SOURCE 2 GATE 3 & TAB - DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) 2 PARAMETERS/TEST CONDITIONS SYMBOL VN66AD VN66AFD UNITS Drain-Source Voltage Gate-Source Voltage Vos 60 VGS ±30 60 V ±30 Tc= 25°C 1.7 Continuous Drain Current ID Tc = 100°C 1 1.46 0.92 A Pulsed Drain Current 1 IDM 3 3 Power Dissipation Tc= 25°C 20 Po Tc = 100°C 8 15 W 6 Operating Junction and Storage Temperature TJ.