VN66AFD Overview
Tstg -55 to 150 Lead Temperature (1/16" from case for 10 seconds) h °C 300 SYMBOL Junction-to-Case RthJC ~pulse width limited by maximum junction temperature. ratings have been revised. ID =lA,VGEN =10V 8 RG= 25.n.
N-channel Enhancement-mode Mos Transistors
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | VN66AFD |
|---|---|
| Manufacturer | Siliconix |
| File Size | 95.48 KB |
| Description | N-Channel Enhancement-Mode MOS Transistors |
| Datasheet | VN66AFD VN66AD Datasheet (PDF) |
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Tstg -55 to 150 Lead Temperature (1/16" from case for 10 seconds) h °C 300 SYMBOL Junction-to-Case RthJC ~pulse width limited by maximum junction temperature. ratings have been revised. ID =lA,VGEN =10V 8 RG= 25.n.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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VN66AFA | FIELD EFFECT POWER TRANSISTOR | GE |
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VN66AFD | N-Channel 60-V (D-S) MOSFETs | Vishay Telefunken |
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VN66AK | (VN66AK / VN67AK) Power Transistor | General Electric |
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VN66AK | (VN66AK / VN67AK) N-Channel Enhancement Mode Vertical Power MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| VN66AD | N-Channel Enhancement-Mode MOS Transistors |
| VN67AB | N-Channel Enhancement-Mode MOS Transistors |
| VN67AD | N-Channel Enhancement-Mode MOS Transistors |
| VN67AFD | N-Channel Enhancement-Mode MOS Transistors |