VPDQ20 Overview
VPDQ20 P-Channel Enhancement-Mode MOSFET .:rSilicanix ~ incorporated DESIGNED FOR: @ Switching Amplification.
VPDQ20 Key Features
- High Breakdown> 200 V
- Low rDSlon) < 20 n
- VP2020E
- VP2020L BSS92
- Available as above specifications
- 1.0 V s=-10Y
- 0.6 10
- 8 V -7 V
- S V -4 V
- 20 -30 VOS (V)