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VPDS06 - P-Channel Enhancement-Mode MOSFET

Key Features

  • Low rDS(on) < 10 n.
  • Available in Surface Mount TYPE Single.

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Datasheet Details

Part number VPDS06
Manufacturer Siliconix
File Size 267.04 KB
Description P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet VPDS06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.L~SIIiilnicocrpDonraitexd VPDS06 P-Channel Enhancement-Mode MOSFET "FETlington" DESIGNED FOR: • Switching (P-Channel Complement to 2N7000) FEATURES • Low rDS(on) < 10 n • Available in Surface Mount TYPE Single PACKAGE DEVICE TO-206AC • VP0610E, TP0610E TO-92 • VP0610L, TP0610L SOT-23 • VP0610T, TP0610T 14-Pin Plastic • VQ2000J 14-Pin Dual-In- line o VQ2000P Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.0041 (0.104) 0.0049 (0.124) Source Pad 0.0041 (0.104) 0.0049 (0.124) T0.027 1 •(0.686) 7-173 VPDS06 TYPICAL CHARACTERISTICS Output Characteristics :: I/if"VI I J I -300 10 (rnA) -200 -100 v V' ~ o o -10 -J -J -3 ~ -20 -30 Vos (V) -40 -50 ~.