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SSF3018D - N-Channel MOSFET

General Description

The SSF3018D is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 11.6mohm.

Power switching application Abso

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Datasheet Details

Part number SSF3018D
Manufacturer Silikron Semiconductor Co
File Size 398.87 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF3018D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SSF3018D Feathers: „ „ „ „ „ Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test ID=80A BV=100V Rdson=14mohm Description: The SSF3018D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 11.6mohm. Application: „ Power switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS EAR TJ TSTG Thermal Resistance Parameter RθJC Junction-to-case Min. — Typ. 0.65 Max.