SSF3117 - Schottky Diode

Silikron Semiconductor Co

General Description

The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Key Features

MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V.

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SSF3117 schottky diode by Silikron Semiconductor Co - Datasheet Preview

Datasheet Details

Part number	SSF3117
Manufacturer	Silikron Semiconductor Co
File Size	370.12 KB
Description	Schottky Diode
Datasheet	SSF3117 Datasheet

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SSF3117 www.DataSheet4U.com DESCRIPTION The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● SCHOTTKY VR = 30V, IF = 2A, VF<0.53V @ 1.