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SSF2307B - MOSFET

General Description

The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number SSF2307B
Manufacturer Silikron Semiconductor
File Size 288.59 KB
Description MOSFET
Datasheet download datasheet SSF2307B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF2307B DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.