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SSF2637E - MOSFET

General Description

The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V.

Key Features

  • VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V ESD Rating:3000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram D DD D 8 7 65 2464371E4 1 2 34 S SSG Marking and pin Assignment.

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Datasheet Details

Part number SSF2637E
Manufacturer Silikron Semiconductor
File Size 276.51 KB
Description MOSFET
Datasheet download datasheet SSF2637E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.