SSF6014D Datasheet | Silikron Semiconductor

Features and Benefits: - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery Marking and pin Assignments Schematic diagram Description : It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3m H Avalanche Current @ L=0.3m H Operating Junction and Storage Temperature Range Max. 60 42 240 115 0.74 60 ± 20 235 39 -55 to + 150 Units W W/°C V V m J A °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version : 2.3 page 1 of 7 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient ④ Typ. 1.31 - Max. - 62 Units ℃/W ℃/W Electrical Characteristics@TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward...