Datasheet Summary
Main Product Characteristics:
VDSS
60V
RDS(on) ID
16mΩ (typ.) 22A
Features and Benefits:
DFN3.3x3.3 Bottom view
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 175℃ operating temperature
Pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application...