SSF9N90ZH - MOSFET

Silikron Semiconductor

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

TO-247 .
Advanced MOSFET process technology.
Special designed for PWM, load switching and general purpose.

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SSF9N90ZH mosfet by Silikron Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSF9N90ZH
Manufacturer	Silikron Semiconductor
File Size	501.47 KB
Description	MOSFET
Datasheet	SSF9N90ZH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 900V RDS(on) 1.2Ω (typ.) ID 9A Features and Benefits: TO-247  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  ESD Rating(HBM) :4KV SSF9N90ZH Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.