SSIG15N135H
SSIG15N135H is MOSFET manufactured by Silikron Semiconductor.
Features and Benefits:
- Advanced Trench-FS Process Technology
- Low Collector-Emitter Saturation Voltage, Typical
Data is 1.9V@15A
- Fast Switching
- High Input Impedance
- Pb- Free Product
- Power Switch Circuit of Induction Cooker
TO-247
Schematic diagram
Description
:
It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application of induction cooker and a wide variety of other applications.
Absolute max Rating:
Symbol IC @ TC = 25°C IC @ TC = 100°C ICM
PD @TC = 25°C
VCES VGES TJ TSTG TL
Parameter Continuous Collector Current Continuous Collector Current Pulsed Collector Current Power Dissipation@ TC = 25°C Power Dissipation@ TC = 100°C Collector-Emitter Voltage Gate-to-Emitter Voltage Operating...
