SSIG15N135H - MOSFET

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating.

Features

Advanced Trench-FS Process Technology.
Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@15A.
Fast Switching.
High Input Impedance.
Pb- Free Product.
Power Switch Circuit of Induction Cooker TO-247 SSIG15N135H Schematic diagram.

Silikron Semiconductor

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Datasheet Details

Part number	SSIG15N135H
Manufacturer	SilikrON Semiconductor
File Size	560.95 KB
Description	MOSFET
Datasheet	SSIG15N135H Datasheet
Additional preview pages of the SSIG15N135H datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 15A @ TC = 100°C Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@15A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Cooker TO-247 SSIG15N135H Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces VCE(sat) rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application of induction cooker and a wide variety of other applications.

Published: Feb 28, 2017 |