Datasheet Details
| Part number | SSMD60150PT |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 272.12 KB |
| Description | Schottky Barrier Rectifier |
| Datasheet | SSMD60150PT-SilikronSemiconductor.pdf |
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Overview: SSMD60150PT Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×30A 150V 175℃ 0.
| Part number | SSMD60150PT |
|---|---|
| Manufacturer | Silikron Semiconductor |
| File Size | 272.12 KB |
| Description | Schottky Barrier Rectifier |
| Datasheet | SSMD60150PT-SilikronSemiconductor.pdf |
|
|
|
: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors;
this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes Value Unit VRRM Peak Repetitive Reverse Voltage 150 V VR(RMS) RMS Reverse Voltage 115 V IF(AV) Average Forward Current Per diode Per device 30 A 60 A IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 300 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range 0.5 -55~175 -55~175 A ℃ ℃ Thermal Resistance Symbol Characterizes Value Unit RθJC Maximum Thermal Resistance Junction To Case (per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit 1.2 ℃/W Test Condition Reverse Breakdown VR Voltage 150 V IR=0.5mA VF Forward Voltage Drop IR Leakage Current 0.82 IF=15A, TJ=25℃ 0.89 V IF=30A, TJ=25℃ 0.74 IF=30A, TJ=125℃ 0.1 5 mA VR=150V, TJ=25℃ VR=150V, TJ=125℃ ©Silikron Semiconductor CO., LTD.
2011.5.26 .silikron.
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