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SSMD60200PT Datasheet Schottky Barrier Rectifier

Manufacturer: Silikron Semiconductor

Overview: SSMD60200PT Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×30A 200V 175℃ 0.

General Description

: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors;

this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes Value Unit VRRM Peak Repetitive Reverse Voltage 200 V VR(RMS) RMS Reverse Voltage 140 V IF(AV) Average Forward Current Per diode Per device 30 A 60 A IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) 300 A IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range 0.5 -55~175 -55~175 A ℃ ℃ Thermal Resistance Symbol Characterizes Value Unit RθJC Maximum Thermal Resistance Junction To Case (per leg) Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit 1.2 ℃/W Test Condition Reverse Breakdown VR Voltage 200 V IR=0.5mA VF Forward Voltage Drop IR Leakage Current 0.85 IF=15A, TJ=25℃ 0.92 V IF=30A, TJ=25℃ 0.76 IF=30A, TJ=125℃ 0.1 5 mA VR=200V, TJ=25℃ VR=200V, TJ=125℃ trr Reverse recovery time Irrm Peak recovery current 28 35 1.2 2 ns A IF=30A,di/dt=100A/us,VR=30V ©Silikron Semiconductor CO., LTD.

2011.5.26 .silikron.

Key Features

  • High Junction Temperature.
  • High ESD Protection.
  • High Forward & Reverse Surge capability TO247 SSMD60200PT Schematic Diagram.

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