SSPL2015 - N-Channel enhancement mode power field effect transistors

Silikron Semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

Key Features

Advanced Process Technology.
Special designed for PWM, load switching and general purpose.

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SSPL2015 n-channel enhancement mode power field effect transistors by Silikron Semiconductor - Datasheet Preview

Datasheet Details

Part number	SSPL2015
Manufacturer	Silikron Semiconductor
File Size	544.07 KB
Description	N-Channel enhancement mode power field effect transistors
Datasheet	SSPL2015 Datasheet

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Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature TO220 SSPL2015 Marking and pin Assignment Schematic diagram Description: These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.