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SSPL2015 - N-Channel MOSFET

Download the SSPL2015 datasheet PDF. This datasheet also covers the SSPL2015-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology.

Key Features

  • TO - 220.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSPL2015-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSPL2015
Manufacturer GOOD-ARK
File Size 0.99 MB
Description N-Channel MOSFET
Datasheet download datasheet SSPL2015 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits TO - 220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSPL2015 200V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.