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SSPL2015D Datasheet N-channel Enhancement Mode Power Field Effect Transistors

Manufacturer: Silikron Semiconductor

Overview: Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A.

Datasheet Details

Part number SSPL2015D
Manufacturer Silikron Semiconductor
File Size 536.92 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet SSPL2015D-SilikronSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • TO-252.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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