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SSS1206H - N-Channel enhancement mode power field effect transistors

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • TO-247 .
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSS1206H
Manufacturer Silikron Semiconductor
File Size 333.55 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet download datasheet SSS1206H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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                                 Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and Benefits TO-247  „ Advanced Process Technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 175℃ operating temperature SSS1206H  Marking and pin Assignment      Schematic diagram    Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.