SSTS20100I Overview
Description
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM Peak Repetitive Reverse Voltage VR(RMS) IF(AV) IFSM RMS Reverse Voltage Average Forward Current Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 100 70 20 150 0.5 -55~150 -55~150 Symbol Characterizes Maximum RθJC Case(per leg) TO251 Value 3.5 Unit V V A A A ℃ ℃ Unit ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 100 V VF Forward Voltage Drop 0.85 V 0.75 IR Leakage Current 0.1 mA 20 Test Condition IR=0.5mA IF=20A, TJ=25℃ IF=20A, TJ=125℃ VR=100V, TJ=25℃ VR=100V, TJ=125℃ ©Silikron Semiconductor CO., LTD. 2011.8.19 Version: 1.0 page 1of5 I-V Curves: SSTS20100I Figure 1：Typical Forward Characteristics Figure 2：Typical Capacitance Characteristics Figure 3：Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD.
Key Features
- High Junction Temperature
- High ESD Protection
- High Forward & Reverse Surge capability TO251 SSTS20100I
