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SSTS2045CTF Datasheet Schottky Barrier Rectifier

Manufacturer: Silikron Semiconductor

Overview:                                                                                     SSTS2045CT/SSTS2045CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×10A 45V 150℃ 0.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors;

this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM VR(RMS) IF(AV) Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current Per diode Per device IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 45 31 10 20 180 2 -55~150 -55~150 Unit V V A A A A ℃ ℃ Thermal Resistance Symbol Characterizes RθJC RθJC Maximum Thermal Resistance Junction To Case(per leg) TO220 TO220F Value 2 4 Unit ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 45 VF Forward Voltage Drop V 0.55 0.5 V IR Leakage Current 0.2 20 mA Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=10A, TJ=125℃ VR=45V, TJ=25℃ VR=45V, TJ=125℃ ©Silikron Semiconductor CO., LTD.

  2011.5.26 .silikron.  Version: 1.0 page 1of6                                                                                     SSTS2045CT/SSTS2045CTF I-V Curves: Figure 1:Typical Forward Characteristics Figure 2:Typical Capacitance Characteristics Figure 3:Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD.

Key Features

  • High Junction Temperature.
  • High ESD Protection.
  • High Forward & Reverse Surge capability TO220 SSTS2045CT TO220F SSTS2045CTF Schematic Diagram.

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