SSTS2045 Datasheet (Silikron Semiconductor)

Part SSTS2045
Description Schottky Barrier Rectifier
Manufacturer Silikron Semiconductor
Size 310.01 KB
Silikron Semiconductor

SSTS2045 Overview

Description

Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC convertors; this product special design for high forward and reverse surge capability Absolute Rating: Symbol Characterizes VRRM VR(RMS) IF(AV) Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Forward Current IFSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal) IRRM Peak Repetitive Reverse Surge Current(Tp=2us) TJ Maximum operation Junction Temperature Range Tstg Storage Temperature Range Value 45 31 20 180 2 -55~150 -55~150 Unit V V A A A ℃ ℃ Symbol Characterizes RθJC Maximum RθJC Case(per leg) TO220 TO220F Value 2 4 Unit ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Characterizes Min Typ Max Unit VR Reverse Breakdown Voltage 45 V 0.55 VF Forward Voltage Drop 0.65 V 0.63 IR Leakage Current 0.2 20 mA Test Condition IR=0.5mA IF=10A, TJ=25℃ IF=20A, TJ=25℃ IF=20A, TJ=125℃ VR=45V, TJ=25℃ VR=45V, TJ=125℃ ©Silikron Semiconductor CO., LTD. 2011.5.26 Version: 1.0 page 1of6 SSTS2045/SSTS2045F I-V Curves: Figure 1:Typical Forward Characteristics Figure 2:Typical Capacitance Characteristics Figure 3:Typical Reverse Characteristics ©Silikron Semiconductor CO., LTD.

Key Features

  • High Junction Temperature
  • High ESD Protection
  • High Forward & Reverse Surge capability TO220 SSTS2045 TO220F SSTS2045F