SMS006N01T1 Datasheet | Silikron

Main Product Characteristics: VDSS 60V RDS(on) 1.3mΩ (typ.) 360A G S S S SSS S Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature TOLL Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.5m H Operating Junction and Storage Temperature Range Max. 360 216 1440 138 60 ± 20 784 -55 to +150 Units W V V m J °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: Preliminary page 1 of 5 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. - - Max. 0.9...