SMS006N09C1 Datasheet | Silikron

Main Product Characteristics: VDSS 60V RDS(on) 8.8mΩ (typ.) 60A S G TO-252 Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 60 40 240 85 60 ± 20 -55 to +150 Units W V V °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: Preliminary page 1 of 5 Thermal Resistance Symbol RθJC Characterizes Junction-to-case ③ Typ. - Max. 1.76 Units...