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SMS010N10J7 - MOSFET

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SMS010N10J7
Manufacturer Silikron
File Size 332.63 KB
Description MOSFET
Datasheet download datasheet SMS010N10J7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 100V RDS(on) 10mΩ (typ.) ID 60A PDFN5x6-8L Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SMS010N10J7 Pin Assignments Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.