SMT006P26A1 Datasheet | Silikron

Features and Benefits: - Advanced MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature Schematic Diagram Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V ① Continuous Drain Current, VGS @ 10V ① Pulsed Drain Current ② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -34 -24 -136 88 -60 ± 20 -55 to +150 Units W V V °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version : Preliminary page 1 of 5 Thermal Resistance Symbol RθJC Characteristics Junction-to-case ③ Typ. - Max. 1.7 Units ℃/W Electrical Characteristics @TJ=25℃unless otherwise specified Symbol V(BR)DSS Parameter Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS Gate threshold voltage Drain-to-Source leakage current Tj=25°C IGSS Gate-to-Source forward leakage gfs Transconductance Qg Total gate...