Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
Features
- Advanced trench MOSFET process technology.
- Special designed for buttery protection, load
switching and general power management.
- Ultra low on-resistance with low gate charge.
- Fast switching and reverse body recovery.
- 150℃ operating temperature
SSF2112H2
43 21 5 678
D1
S1 S1
28121025HA2
G1
D2
S2 S2 G1
G2
D1 G2
S1
D2 S2
Marking and pin
Assignment
Schematic diagram
.
SSF2112H2 Datasheet
