SSF2112H2 Overview
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Vo.
Key Features
- Advanced trench MOSFET process technology
- Special designed for buttery protection, load switching and general power management
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
