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SSF3108J2 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for battery charge, load switching in cellular handset and general ultraportable.

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Datasheet Details

Part number SSF3108J2
Manufacturer Silikron
File Size 863.65 KB
Description MOSFET
Datasheet download datasheet SSF3108J2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS 30V RDS(on) 5.8mΩ(typ.) ID 18A DFN2x2-6L Pin Assignments Features and Benefits:  Advanced trench MOSFET process technology  Special designed for battery charge, load switching in cellular handset and general ultraportable applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3108J2 Schematic Diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.