Datasheet Summary
Main Product Characteristics:
VDSS
30V
RDS(on) 6.7mΩ (typ.)
25A
Features and Benefits:
PQFN 5x6-8L
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Pin Assignments Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...