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SSF3115H1 - MOSFET

General Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced MOSFET process technology Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF3115H1
Manufacturer Silikron
File Size 384.29 KB
Description MOSFET
Datasheet download datasheet SSF3115H1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Main Product Characteristics: VDSS -30V RDS(on) 11.5mΩ (typ.) ID -10A① SOP-8 Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SSF3115H1 Pin Assignments Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable devicefor use in power switching application and a wide variety of other applications.