SSF3115H1 Datasheet | Silikron

Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Pin Assignments Schematic Diagram Description : It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable devicefor use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TA = 25°C IDM PD @TA = 25°C VDS VGS EAS TJ TSTG Parameter Continuous Drain Current ① Pulsed Drain Current ② Power Dissipation ③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.5m H Operating Junction and Storage Temperature Range Max. -10 -50 3.1 -30 ± 20 81 -55 to +150 Units W V V m J °C ©Silikron Microelectronics (Suzhou) Co.,Ltd .silikron. Version: 1.0 page 1 of 6 Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Typ. - Max. 40 Units ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage Min. -30 RDS(on) Static Drain-to-Source on-resistance - - VGS(th) Gate threshold voltage -1 IDSS Drain-to-Source leakage current - IGSS Gate-to-Source forward leakage - - Qg Total gate charge -...