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SSF4703DC - MOSFET

General Description

The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Key Features

  • MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V.

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Datasheet Details

Part number SSF4703DC
Manufacturer Silikron
File Size 198.98 KB
Description MOSFET
Datasheet download datasheet SSF4703DC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES ● MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ●SCHOTTKY VR = 20V, IF = 1A, VF<0.5V @ 0.