SSF6808F3X
Features and Benefits:
- Advanced MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 150℃ operating temperature
Description
:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC = 25°C IDM
PD @TC = 25°C
VDS VGS EAS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
TO220 TO220F
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.5m H
Operating Junction and Storage Temperature Range
Max. 80 320 92 38 60 ± 20 191
-55 to +150
Units A
W V V m J °C
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