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SSFD6035U - MOSFET

General Description

It utilizes the optimized chip design to balance the high density and the low on-resistance with high repetitive avalanche performance improvement.

Based on its excellent efficiency and reliability, the product could be used in power invert, rectifying, energy storage and other application area.

Key Features

  • Advanced MOSFET process technology.
  • Special design for PWM, load switching etc.
  • Ultra-low Rdson together with low gate charge.
  • Fast switch and body-diode trr.
  • 150℃ operating temperature SSFD6035U Marking and Pin Assignments Schematic Diagram.

📥 Download Datasheet

Datasheet Details

Part number SSFD6035U
Manufacturer Silikron
File Size 1.15 MB
Description MOSFET
Datasheet download datasheet SSFD6035U Datasheet

Full PDF Text Transcription for SSFD6035U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSFD6035U. For precise diagrams, and layout, please refer to the original PDF.

Main Product Characteristics: VDSS -60V RDS(on) 23mΩ ID -26A TO-252 (DPAK) Main Features  Advanced MOSFET process technology  Special design for PWM, load switching etc...

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MOSFET process technology  Special design for PWM, load switching etc  Ultra-low Rdson together with low gate charge  Fast switch and body-diode trr  150℃ operating temperature SSFD6035U Marking and Pin Assignments Schematic Diagram Description It utilizes the optimized chip design to balance the high density and the low on-resistance with high repetitive avalanche performance improvement. Based on its excellent efficiency and reliability, the product could be used in power invert, rectifying, energy storage and other application area.