SSFD6035U Overview
It utilizes the optimized chip design to balance the high density and the low on-resistance with high repetitive avalanche performance improvement. Based on its excellent efficiency and reliability, the product could be used in power invert, rectifying, energy storage and other application area. Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS TJ TSTG Parameter Continuous Drain Current, VGS @...
SSFD6035U Key Features
- Advanced MOSFET process technology
- Special design for PWM, load switching etc
- Ultra-low Rdson together with low gate charge
- Fast switch and body-diode trr
- 150℃ operating temperature
- Max. 2.0
- 48 11 10 27 31 60 33
- 30 40 -2.5 -1 100
- Max. -26
- Units A
