Silikron SSFD6035U
The power dissipation PD is based on max.| Part No. | SSFD6035U |
|---|---|
| Datasheet | SSFD6035U Download |
| Manufacturer |  Silikron |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced MOSFET process technology● Special design for PWM, load switching etc
● Ultra-low Rdson together with low gate charge
● Fast switch and body-diode trr
● 150℃ operating temperature SSFD6035U Marking and Pin Assignments Schematic Diagram
DESCRIPTION
It utilizes the optimized chip design to balance the high density and the low on-resistance with high repetitive avalanche performance improvement. Based on its excellent efficiency and reliability, the product could be used in power invert, rectifying, energy storage and other application area. Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS EAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.5mH Operating Junction and Storage Temperature Range Max. -26 -60 60 -60 ± 20 125 -55 to +150 Units A W V V mJ °C Thermal Resistance Symbol RθJC Characteristics Junction-to-case③ ©Silikron Microelectronics (Suzhou) Co.,Ltd Typ. — Max.
