SSFM3008 Overview
Description
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Cont.
Key Features
- Advanced trench MOSFET process technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 175℃ operating temperature SSFM3008 SSFM3008 Marking and pin Assignment
