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Product Summary
V(BR)DSS
RDS(on)TYP
ID
13mΩ@-10V
-30V
-9A
20mΩ@-4.5V
SP30P13DP8
30V Dual P-Channel MOSFET
Feature
TrenchFET Power MOSFET Excellent RDS(on) and Low Gate Charge
Package
Application
Battery Switch Load switch Power management
Circuit diagram
SOP-8L
Marking
30P13 =Device Code
**
=Week Code
Ver-1.1, 2023/07
Shanghai Siliup Semiconductor Technology Co. Ltd.
1
SP30P13DP8
30V Dual P-Channel MOSFET
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-9
A
Pulsed Drain Current1)
IDM
-36
A
Power Dissipation
PD
1.9
W
Thermal Resistance from Junction to Ambient2)
RθJA
65.
SP30P13DP8 Datasheet
