SP60N13P8 Datasheet | Siliup Semiconductor

Feature - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Application - Power switching application - Load switch Package Circuit diagram SOP-8L Marking 60N13 : Product code - - : Week code. Ver-1.3, 2023/09 Shanghai Siliup Semiconductor Technology Co. Ltd. 60V Uni N-Channel MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current(1) Maximum Power Dissipation Thermal Resistance,Junction-to-Case(2) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RθJC TJ,TSTG Limit 60 ±20 9 36 2.1 60 -55 To 150 Unit V V A A W ℃/W ℃ Electrical characteristics (TA=25 o C, unless otherwise noted) Characteristic Symbol Test Condition Static Electrical Characteristics Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Gate-Source Leakage Gate Threshold Voltage Static Drain-Source On-Resistance IDSS IGSS VGS(TH) RDS(ON) VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VGS = 4.5V, ID = 6A Dynamic Characteristics Input Capacitance Output...