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Product Summary
V(BR)DSS
RDS(on)TYP
ID
13mΩ@10V
60V
9A
18mΩ@4.5V
SP60N13P8
60V Uni N-Channel MOSFET
Feature
High density cell design for ultra low Rdson Fully characterized avalanche voltage and
current Low gate to drain charge to reduce switching
losses
Application
Power switching application Load switch
Package
Circuit diagram
SOP-8L
Marking
60N13 : Product code
**
: Week code.
Ver-1.3, 2023/09
Shanghai Siliup Semiconductor Technology Co. Ltd.
SP60N13P8 Datasheet
