SE150100 - N-Channel MOSFET

This page provides the datasheet information for the SE150100, a member of the SE150100-Sino N-Channel MOSFET family.

Product Overview

Part number	SE150100
Manufacturer	Sino-IC
File Size	408.73 KB
Description	N-Channel MOSFET
Datasheet	SE150100 Datasheet
Additional preview pages of the SE150100 datasheet.

excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations See Diagram below F

For a single MOSFET.
VDS = 150V.
RDS(ON) = 9.8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Rating 150 ±20 100 390 1100 370 -55 to 175 Units V V A mJ W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE150100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Sym.

Other Datasheets by Sino-IC

Published: Feb 22, 2019 |