SE150100 Datasheet N-Channel MOSFET

Manufacturer: Sino-IC

Overview: SE150100 N-Channel Enhancement-Mode MOSFET Revision: A General.

Download the SE150100 datasheet PDF. This datasheet also includes the SE150100-Sino variant, as both parts are published together in a single manufacturer document.

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SE150100 n-channel mosfet by Sino-IC - Datasheet Preview

Datasheet Details

Part number	SE150100
Manufacturer	Sino-IC
File Size	408.73 KB
Description	N-Channel MOSFET
Download	SE150100 Download (PDF)

General Description

Advanced trench technology to provide excellent RDS(ON), low gate charge and low operation voltage.

This device is suitable for using as a load switch or in PWM applications.

 Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below

Key Features

For a single MOSFET.
VDS = 150V.
RDS(ON) = 9.8mΩ @ VGS=10V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Single pulse avalanche energy Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID EAS PD TJ Rating 150 ±20 100 390 1100 370 -55 to 175 Units V V A mJ W ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE150100 Electrical Characteristics (TJ=25℃ unless otherwise noted) Sym.

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