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SE2102 - Small Signal MOSFET

This page provides the datasheet information for the SE2102, a member of the SE2102-Sino Small Signal MOSFET family.

Datasheet Summary

Description

The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness

Features

  • VDS = 20V.
  • ID = 600mA.
  • RDS(ON) = 280mΩ @ VGS=4.5V.
  • RDS(ON) = 370mΩ @ VGS=2.5V Pin configurations See Diagram below 3 1 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range 2 Gate 1 Source 2 Symbol VDS VGS ID PD TJ 3 Drain Rating 20 ±6 0.6 1 170 -55 to 150 Units V V A mW ℃ ShangHai Sino-IC Microelectronic Co. , Ltd. 1. SE2102 Electrical C.

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Datasheet preview – SE2102

Datasheet Details

Part number SE2102
Manufacturer Sino-IC
File Size 508.44 KB
Description Small Signal MOSFET
Datasheet download datasheet SE2102 Datasheet
Additional preview pages of the SE2102 datasheet.

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    Full PDF Text Transcription

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    Jul 2015 SE2102 Small Signal MOSFET 20V, 600mA, Single N-Channel MOSFET Revision: A General Description The MOSFETs from SINO-IC provide the best combination of fast switching, low on-resistance and cost-effectiveness Features  VDS = 20V  ID = 600mA  RDS(ON) = 280mΩ @ VGS=4.5V  RDS(ON) = 370mΩ @ VGS=2.5V Pin configurations See Diagram below 3 1 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range 2 Gate 1 Source 2 Symbol VDS VGS ID PD TJ 3 Drain Rating 20 ±6 0.6 1 170 -55 to 150 Units V V A mW ℃ ShangHai Sino-IC Microelectronic Co., Ltd. 1.
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