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SM1A35PSU
®
P-Channel Enhancement Mode MOSFET
Features
• -100V/-18A,
RDS(ON)= 90mΩ(max.) @ VGS=-10V
R= DS(ON)
102mΩ(max.)
@
V =-4.5V GS
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
• 100% UIS Tested
• ESD Protection
• HBM ESD protection level pass 8KV
Note : The diode connected between the gate and source serves only as protection against ESD. No
gate overvoltage rating is implied.
Pin Description
Drain 4
2 3 Source 1 Gate
Top View of TO-252-3
D
G
Applications
• Power Management for Industrial DC / DC
Converters.