Datasheet4U Logo Datasheet4U.com

SM4301PSK - P-Channel MOSFET

General Description

DD DD S S S G Top View of SOP-8 ( 5,6,7,8 ) D D DD Applications

Portable Equipment and Battery Powered Systems.

Key Features

  • -30V/-17.5A, RDS(ON) =6.8mW(max. ) @ VGS =-10V RDS(ON) =13mW(max. ) @ VGS =-4.5V.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).
  • HBM ESD protection level of 2.6KV typical Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Pin.

📥 Download Datasheet

Datasheet Details

Part number SM4301PSK
Manufacturer Sinopower
File Size 235.84 KB
Description P-Channel MOSFET
Datasheet download datasheet SM4301PSK Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SM4301 440 WATT BATTERY CONVERTERS CUSTOM POWER DESIGN
SM4300 440 WATT BATTERY CONVERTERS CUSTOM POWER DESIGN
SM4302 440 WATT BATTERY CONVERTERS CUSTOM POWER DESIGN
SM4303 440 WATT BATTERY CONVERTERS CUSTOM POWER DESIGN
SM4303PSKC-TRG P-Channel 30V MOSFET VBsemi

Other Datasheets by Sinopower

Part Number Description
SM4301PSKP P-Channel MOSFET
SM4301PSU P-Channel MOSFET
SM4301PSUC P-Channel MOSFET
SM4303PSK P-Channel MOSFET
SM4303PSKP P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SM4301PSK ® P-Channel Enhancement Mode MOSFET Features · -30V/-17.5A, RDS(ON) =6.8mW(max.) @ VGS =-10V RDS(ON) =13mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) · HBM ESD protection level of 2.6KV typical Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Pin Description DD DD S S S G Top View of SOP-8 ( 5,6,7,8 ) D D DD Applications · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.