Datasheet Summary
®
P-Channel Enhancement Mode MOSFET
Features
- -30V/-57A,
RDS(ON) = 8mW(max.) @ VGS =-10V RDS(ON) = 14mW(max.) @ VGS =-4.5V
- HBM ESD protection level pass 8KV
- 100% UIS + Rg Tested
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Applications
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
( 5,6,7,8 ) D D DD
Pin 1
(4) G
- Power Management in Notebook puter,
Portable Equipment and Battery Powered Systems.
SSS (1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
SM4303PS
Assembly Material Handling Code...
