Datasheet Summary
®
P-Channel Enhancement Mode MOSFET
Features
- -30V/-68A,
RDS(ON) = 9mΩ(max.) @ VGS =-10V RDS(ON) = 15mΩ(max.) @ VGS =-4.5V
- HBM ESD protection level pass 8KV
- 100% UIS + R Tested g
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Applications
- Power Management in Notebook puter,
Portable Equipment and Battery Powered Systems.
Ordering and Marking Information
Pin Description
S D G Top View of TO-251S
P-Channel MOSFET
SM4303PS
Assembly Material Handling Code Temperature Range Package...
