Datasheet Summary
®
P-Channel Enhancement Mode MOSFET
Features
- -30V/-68A,
RDS(ON) = 9mW(max.) @ VGS =-10V RDS(ON) = 15mW(max.) @ VGS =-4.5V
- Reliable and Rugged
- Lead Free and Green Devices Available
(RoHS pliant)
- HBM ESD protection level pass 8KV
Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Applications
- Power Management in Notebook puter,
Portable Equipment and Battery Powered Systems.
Pin Description
Drain 4
2 3 Source 1 Gate
Top View of TO-252-3
P-Channel MOSFET
Ordering and Marking Information
SM4303PS
Assembly Material Handling Code Temperature Range
Package Code
Package...
