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SM9993DSQG - Dual N-Channel MOSFET

Datasheet Summary

Description

S2 S2G2 S1 S1G1 DFN2x3-6 DD (3) (4) G1 G2 S1 S1 (1) (2) S2 S2 (5) (6) N-Channel MOSFET Ordering and Marking Information SM9993DS 9993X SM9993DS QG : XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code QG : DFN2x3-6 Operating Junction Temperature Range C : -55 to

Features

  • 20V/12A, RDS(ON)= 7.4mΩ (Max. ) @ VGS=4.5V R= DS(ON) 7.6mΩ (Max. ) @ V =4V GS RDS(ON)= 8mΩ (Max. ) @ VGS=3.7V RDS(ON)= 8.7mΩ (Max. ) @ VGS=3.1V R= DS(ON) 10mΩ (Max. ) @ V =2.5V GS.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).
  • ESD protection.

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Datasheet Details

Part number SM9993DSQG
Manufacturer Sinopower
File Size 483.68 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM9993DSQG Datasheet
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Full PDF Text Transcription

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SM9993DSQG ® Dual N-Channel Enhancement Mode MOSFET Features • 20V/12A, RDS(ON)= 7.4mΩ (Max.) @ VGS=4.5V R= DS(ON) 7.6mΩ (Max.) @ V =4V GS RDS(ON)= 8mΩ (Max.) @ VGS=3.7V RDS(ON)= 8.7mΩ (Max.) @ VGS=3.1V R= DS(ON) 10mΩ (Max.) @ V =2.5V GS • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) • ESD protection Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. • One Cell Li-ion Battery Pack.
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