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SM9998DSQG - Dual N-Channel MOSFET

Datasheet Summary

Description

S2 S2G2 S1 S1G1 DFN2x3A-6_EP DD (3) (4) G1 G2 S1 S1 (1) (2) S2 S2 (5) (6) N-Channel MOSFET Ordering and Marking Information SM9998DS SM9998DS QG : 9998I XXXXX Assembly Material Handling Code Temperature Range Package Code Package Code QG : DFN2x3A-6_EP Operating Junction Temperature Range C

Features

  • 20V/9.7A, RDS(ON)= 7.5mW (Max. ) @ VGS=4.5V RDS(ON)= 7.9mW (Max. ) @ VGS=4V RDS(ON)= 8.2mW (Max. ) @ VGS=3.7V RDS(ON)= 8.7mW (Max. ) @ VGS=3.1V RDS(ON)= 9.9mW (Max. ) @ VGS=2.5V.
  • ESD protection.
  • 100% UIS Tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number SM9998DSQG
Manufacturer Sinopower
File Size 280.11 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM9998DSQG Datasheet
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Full PDF Text Transcription

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SM9998DSQG ® Dual N-Channel Enhancement Mode MOSFET Features · 20V/9.7A, RDS(ON)= 7.5mW (Max.) @ VGS=4.5V RDS(ON)= 7.9mW (Max.) @ VGS=4V RDS(ON)= 8.2mW (Max.) @ VGS=3.7V RDS(ON)= 8.7mW (Max.) @ VGS=3.1V RDS(ON)= 9.9mW (Max.) @ VGS=2.5V · ESD protection · 100% UIS Tested · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applications · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. · One Cell Li-ion Battery Pack.
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