BTB06 Datasheet | Sirectifier Semiconductors

BTB/BTA06 .. Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 G T2 T1 T2 G T1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-22 0AB Tc = 100 °C ITSM I²t d I/dt IGM PG(AV) Tstg Tj Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature r ange F = 60 Hz F = 50 Hz t = 16.7 ms t = 20 ms 63 60 21 A A²s A/µs A W °C tp = 10 ms F = 120 Hz tp = 20 µs Tj = 125° C Tj = 125°C Tj = 125° C 50 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL d V/dt (2) VD = 12 V VD = VDRM IT = 100 m A IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III II MIN. MIN. (d I/dt)c (2) Without snubber RL = 30 Ω RL = 3.3 kΩ Tj = 125°C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 400 3.5 35 1.3 0.2 50 70 80 1000 5.3 V/µs A/ms BTA/BTB BW 50 m A V V m A m A Unit BTB/BTA06 .. Discrete Triacs(Non-Isolated/Isolated) s STANDARD (4 Quadrants) Symbol IGT (1) VD = 12 V VGT VGD IH (2) IL VD = VDRM IT = 500 m A IG = 1.2 IGT I - III - IV II RL = 3.3 Ω Tj = 125°C Test Conditions RL = 30 Ω Quadrant I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. MIN. MIN. Value 50 100 1.3 0.2 50 50 100 400 10 V/µs V/µs Unit m A V V m A m A d V/dt (2) VD = 67 %...