BTB06 Datasheet
BTB06 Datasheet (STMicroelectronics)
STMicroelectronics
The BTA/BTB06 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application o.
VERY LOW IGT = 10mA max LOW IH = 15mA max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity i.
BTB06 Datasheet (Sirectifier Semiconductors)
Sirectifier Semiconductors
BTB/BTA06 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 .
21 A A²s A/µs A W °C tp = 10 ms F = 120 Hz tp = 20 µs Tj = 125° C Tj = 125°C Tj = 125° C 50 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) I.
BTB06 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc Triacs BTB06 T/D/S/A FEATURES ·With TO-220AB non insulated package ·Suitable for general purpose applications where gate high sensitivity is required. application on 4Q such as phase control and.
*With TO-220AB non insulated package
*Suitable for general purpose applications where gate high sensitivity is
required. application on 4Q such as phase control and static switching.
*Minimum Lot-to-Lot variations for robust device performance and reliable
Operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
BTB06 Datasheet (Unisonic Technologies)
Unisonic Technologies
The UTC BTB06 is a 6A triacs which can be operated in 4 quadrants, it uses UTC’s advanced technology to provide customers with high commutation performances. The UTC BTB06 is suitable for AC switching.
IT(RMS) RATINGS 6 Non Repetitive Surge Peak On-State Current (Full Cycle TJ initial=25°C) F=50Hz t=20ms F=60Hz t=16.7ms ITSM 60 63 I2t Value for Fusing tP=10ms I2t 21 Critical Rate of Rise of On-State Current: IG=2xIGT, tr≤100ns F=120Hz TJ=125°C dI/dt 50 Peak Gate Current tP=20µs TJ.