BTB06 Datasheet | Inchange Semiconductor

FEATURES - With TO-220AB non insulated package - Suitable for general purpose applications where gate high sensitivity is required. application on 4Q such as phase control and static switching. - Minimum Lot-to-Lot variations for robust device performance and reliable Operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER IT(RMS) RMS on-state current (full sine wave)Tj=90℃ ITSM Non-repetitive peak on-state current tp=10ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient UNIT ℃ -45~150 ℃ 3.2 ℃/W ℃/W SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage 400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=110℃ IDRM Repetitive peak off-state current VD=VDRM,...