BTB04-800 Datasheet | Inchange Semiconductor

FEATURES - With TO-220AB non insulated package - Suitable for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. - Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (full sine wave)Tj=95℃ ITSM Non-repetitive peak on-state current tp=10ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=110℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=110℃ Ⅰ Gate trigger current Ⅱ VD=12V; RL= 30Ω Ⅲ Ⅳ Holding current IGT= 0.1A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω VTM On-state voltage IT= 5.5A ; tp=...