MBR2550CT Datasheet (mbr25xxct) Wide Temperature Range And High Tjm Schottky Barrier Rectifiers

Manufacturer: Sirectifier Semiconductors

Overview: MBR2545CT thru MBR2560CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C(TAB) A C A C A Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 A=Anode, C=Cathode, TAB=Cathode www.DataSheet4U.com MBR2545CT MBR2550CT MBR2560CT Symbol I(AV) IFSM dv/dt VRRM V 45 50 60 VRMS V 31.5 35 42 VDC V 45 50 60 Characteristics Maximum Average Forward Rectified Current @TC=130oC Maximum Ratings 30 150 10000 IF=15A IF=15A IF=30A IF=30A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.65 0.75 1.0 50 1.5 450 -55 to +150 -55 to +175 Unit A A V/us Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Per Leg) At (Note 1) VF V IR ROJC CJ TJ TSTG Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) mA o C/W pF o o Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range C C NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MBR2550CT
Manufacturer	Sirectifier Semiconductors
File Size	135.47 KB
Description	(MBR25xxCT) Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Datasheet	MBR2550CT MBR2545CT Datasheet (PDF)

Key Features

Metal of silicon rectifier, majority carrier conducton.
Guard ring for transient protection.
Low power loss, high efficiency.
High current capability, low VF.
High surge capacity.
For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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