SDD320 Datasheet | Sirectifier Semiconductors

FEATURES - International standard package - Direct copper bonded Al2O3-ceramic base plate - Planar passivated chips - Isolation voltage 3600 V~ APPLICATIONS - Supplies for DC power equipment - DC supply for PWM inverter - Field supply for DC motors - Battery DC power supplies ADVANTAGES - Space and weight savings - Simple mounting - Improved temperature and power cycling - Reduced protection circuits Diode-Diode Modules .. Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD320 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature .. 3 x SDD320 0.15 K/W 30° DC Fig. 6 Transient thermal impedance junction to case (per diode) Rth JC for various conduction angles d: d DC 180o C 120o C 60o C 30o C Rth JC (K/W) 0.129 0.131 0.132 0.132 0.133 Zth JC Constants for Zth JC calculation: i 0 0.00 10-3 Rthi (K/W) 0.0035 0.0165 0.1091 ti (s) 0.0099 0.168 0.456 10-2 10-1 101 s 102...